BCY65E8 NPN Transistor

The BCY65E8 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCY65E8 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCY65E8 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCY65E8 transistor as follows.

BCY65E8 Transistor Specification

Transistor Code		BCY65E8
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	125MHz
Collector Capacitance	CC	6pF

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