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BCY59DP NPN Transistor

The BCY59DP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCY59DP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCY59DP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCY59DP transistor as follows.

Circuit diagram symbol of the BCY59DP transistor

BCY59DP Transistor Specification

Transistor Code BCY59DP
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO226
Collector Power Dissipation (Maximum) PC 0.39W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 350
Transition Frequency FT 120MHz
Collector Capacitance CC 7pF

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More Transistors Datasheets in TO226 Package

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