BCY58DP NPN Transistor

The BCY58DP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCY58DP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCY58DP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCY58DP transistor as follows.

BCY58DP Transistor Specification

Transistor Code		BCY58DP
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO226
Collector Power Dissipation (Maximum)	PC	0.39W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		350
Transition Frequency	FT	120MHz
Collector Capacitance	CC	7pF

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