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BCY58DP NPN Transistor

The BCY58DP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCY58DP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCY58DP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCY58DP transistor as follows.

Circuit diagram symbol of the BCY58DP transistor

BCY58DP Transistor Specification

Transistor Code BCY58DP
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO226
Collector Power Dissipation (Maximum) PC 0.39W
Collector-Base Voltage (Maximum) VCB 32V
Collector-Emitter Voltage (Maximum) VCE 32V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 350
Transition Frequency FT 120MHz
Collector Capacitance CC 7pF

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