BCW66GLT1G NPN Transistor

The BCW66GLT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCW66GLT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCW66GLT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCW66GLT1G transistor as follows.

BCW66GLT1G Transistor Specification

Transistor Code		BCW66GLT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		EG
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	75V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		160
Transition Frequency	FT	100MHz
Collector Capacitance	CC	12pF

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