BCW61DLT1 PNP Transistor

The BCW61DLT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BCW61DLT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCW61DLT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BCW61DLT1 transistor as follows.

BCW61DLT1 Transistor Specification

Transistor Code		BCW61DLT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO236
Transistor SMD Code		BD
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		380
Transition Frequency	FT	125MHz
Collector Capacitance	CC	6pF

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