BCW60DLT1 NPN Transistor

The BCW60DLT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCW60DLT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCW60DLT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCW60DLT1 transistor as follows.

BCW60DLT1 Transistor Specification

Transistor Code		BCW60DLT1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		380
Transition Frequency	FT	125MHz
Collector Capacitance	CC	4.5pF

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