BCW30LT1G PNP Transistor

The BCW30LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BCW30LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCW30LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BCW30LT1G transistor as follows.

BCW30LT1G Transistor Specification

Transistor Code		BCW30LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		C2
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		215
Transition Frequency	FT	150MHz
Collector Capacitance	CC	7pF

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