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BCP56-10T3G NPN Transistor

The BCP56-10T3G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCP56-10T3G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCP56-10T3G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCP56-10T3G transistor as follows.

Circuit diagram symbol of the BCP56-10T3G transistor

BCP56-10T3G Transistor Specification

Transistor Code BCP56-10T3G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT223
Transistor SMD Code BH-10
Collector Power Dissipation (Maximum) PC 1.5W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 63
Transition Frequency FT 130MHz

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