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BCP53T1G PNP Transistor

The BCP53T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BCP53T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCP53T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BCP53T1G transistor as follows.

Circuit diagram symbol of the BCP53T1G transistor

BCP53T1G Transistor Specification

Transistor Code BCP53T1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT223
Collector Power Dissipation (Maximum) PC 1.5W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 50MHz

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More Transistors Datasheets in SOT223 Package

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