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BCP53-10T1G PNP Transistor

The BCP53-10T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BCP53-10T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCP53-10T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BCP53-10T1G transistor as follows.

Circuit diagram symbol of the BCP53-10T1G transistor

BCP53-10T1G Transistor Specification

Transistor Code BCP53-10T1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT223
Transistor SMD Code AH-10
Collector Power Dissipation (Maximum) PC 1.5W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 63
Transition Frequency FT 50MHz

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