BCM856DS PNP Transistor

The BCM856DS is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BCM856DS transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCM856DS transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BCM856DS transistor as follows.

BCM856DS Transistor Specification

Transistor Code		BCM856DS
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT457
Transistor SMD Code		DS
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	65V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	2.2pF

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