BCM847DS NPN Transistor

The BCM847DS is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BCM847DS transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BCM847DS transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BCM847DS transistor as follows.

BCM847DS Transistor Specification

Transistor Code		BCM847DS
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT457
Transistor SMD Code		R6
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	1.5pF

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