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BC858CLT3G PNP Transistor

The BC858CLT3G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BC858CLT3G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC858CLT3G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BC858CLT3G transistor as follows.

Circuit diagram symbol of the BC858CLT3G transistor

BC858CLT3G Transistor Specification

Transistor Code BC858CLT3G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 3L
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 420
Transition Frequency FT 100MHz
Collector Capacitance CC 4.5pF

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