BC858AWT1G PNP Transistor

The BC858AWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BC858AWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC858AWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BC858AWT1G transistor as follows.

BC858AWT1G Transistor Specification

Transistor Code		BC858AWT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT323
Transistor SMD Code		3J
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		125
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4.5pF

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