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BC856BWT1G PNP Transistor

The BC856BWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BC856BWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC856BWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BC856BWT1G transistor as follows.

Circuit diagram symbol of the BC856BWT1G transistor

BC856BWT1G Transistor Specification

Transistor Code BC856BWT1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT323
Transistor SMD Code 3B
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 65V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 220
Transition Frequency FT 100MHz
Collector Capacitance CC 4.5pF

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