BC856BWT1 PNP Transistor

The BC856BWT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BC856BWT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC856BWT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BC856BWT1 transistor as follows.

BC856BWT1 Transistor Specification

Transistor Code		BC856BWT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT323
Transistor SMD Code		3B
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		290
Transition Frequency	FT	300MHz
Collector Capacitance	CC	6pF

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