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BC856BS PNP Transistor

The BC856BS is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BC856BS transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC856BS transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BC856BS transistor as follows.

Circuit diagram symbol of the BC856BS transistor

BC856BS Transistor Specification

Transistor Code BC856BS
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT363
Transistor SMD Code *E6
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 65V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 2.3pF

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More Transistors Datasheets in SOT363 Package

BC846AS BC846AS NPN Transistor BC846BDW1T1G BC846BDW1T1G NPN Transistor BC846BS BC846BS NPN Transistor BC846S BC846S NPN Transistor BC847BDW1T1G BC847BDW1T1G NPN Transistor BC847BDW1T3G BC847BDW1T3G NPN Transistor BC847BS BC847BS NPN Transistor BC847CDW1T1G BC847CDW1T1G NPN Transistor BC847S BC847S NPN Transistor BC848CDW1T1G BC848CDW1T1G NPN Transistor BC856AS BC856AS PNP Transistor BC856BDW1T1G BC856BDW1T1G PNP Transistor BC856BDW1T3G BC856BDW1T3G PNP Transistor BC856S BC856S PNP Transistor BC857BDW1T1G BC857BDW1T1G PNP Transistor BC857BS BC857BS PNP Transistor BC857CDW BC857CDW PNP Transistor BC857CDW1T1G BC857CDW1T1G PNP Transistor BC857S BC857S PNP Transistor BC858CDW BC858CDW PNP Transistor