BC850BWT1 NPN Transistor

The BC850BWT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BC850BWT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC850BWT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BC850BWT1 transistor as follows.

BC850BWT1 Transistor Specification

Transistor Code		BC850BWT1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT323
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		290
Transition Frequency	FT	300MHz
Collector Capacitance	CC	6pF

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