BC817DS NPN Transistor

The BC817DS is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BC817DS transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BC817DS transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BC817DS transistor as follows.

BC817DS Transistor Specification

Transistor Code		BC817DS
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT457
Transistor SMD Code		N3
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		160
Transition Frequency	FT	100MHz
Collector Capacitance	CC	5pF

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