The B1129NT1V-1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the B1129NT1V-1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The B1129NT1V-1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the B1129NT1V-1 transistor as follows.
| Transistor Code | B1129NT1V-1 | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Collector Power Dissipation (Maximum) | PC | 0.075W |
| Collector-Base Voltage (Maximum) | VCB | 12V |
| Collector-Emitter Voltage (Maximum) | VCE | 10V |
| Collector Current (Maximum) | IC | 0.01A |
| Operating Junction Temperature (Maximum) | TJ | 125°C |
| Emitter-Base Voltage (Maximum) | VEB | 4V |
| Forward Current Transfer Ratio (hFE Value) | 80 | |
| Collector Capacitance | CC | 3pF |
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