ASY63N PNP Transistor

The ASY63N is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the ASY63N transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ASY63N transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the ASY63N transistor as follows.

ASY63N Transistor Specification

Transistor Code		ASY63N
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO1
Collector Power Dissipation (Maximum)	PC	0.075W
Collector-Base Voltage (Maximum)	VCB	28V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	75°C
Emitter-Base Voltage (Maximum)	VEB	20V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	4MHz

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