ASY55N PNP Transistor

The ASY55N is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the ASY55N transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ASY55N transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the ASY55N transistor as follows.

ASY55N Transistor Specification

Transistor Code		ASY55N
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO1
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	5V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	75°C
Emitter-Base Voltage (Maximum)	VEB	20V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	7MHz
Collector Capacitance	CC	23pF

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