APT13005DI NPN Transistor

The APT13005DI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the APT13005DI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The APT13005DI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the APT13005DI transistor as follows.

APT13005DI Transistor Specification

Transistor Code		APT13005DI
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO251
Collector Power Dissipation (Maximum)	PC	25W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	4MHz
Collector Capacitance	CC	45pF

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