AF125 PNP Transistor

The AF125 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the AF125 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The AF125 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the AF125 transistor as follows.

AF125 Transistor Specification

Transistor Code		AF125
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO72
Collector Power Dissipation (Maximum)	PC	0.075W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	75°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	75MHz
Collector Capacitance	CC	3pF

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