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AF115N PNP Transistor

The AF115N is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the AF115N transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The AF115N transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the AF115N transistor as follows.

Circuit diagram symbol of the AF115N transistor

AF115N Transistor Specification

Transistor Code AF115N
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO44-1
Collector Power Dissipation (Maximum) PC 0.075W
Collector-Base Voltage (Maximum) VCB 32V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.01A
Operating Junction Temperature (Maximum) TJ 75°C
Emitter-Base Voltage (Maximum) VEB 2V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 75MHz
Collector Capacitance CC 3pF

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More Transistors Datasheets in TO44-1 Package

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