AF115 PNP Transistor

The AF115 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the AF115 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The AF115 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the AF115 transistor as follows.

AF115 Transistor Specification

Transistor Code		AF115
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO7
Collector Power Dissipation (Maximum)	PC	0.075W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	75°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	75MHz
Collector Capacitance	CC	3pF

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