AF101V PNP Transistor

The AF101V is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the AF101V transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The AF101V transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the AF101V transistor as follows.

AF101V Transistor Specification

Transistor Code		AF101V
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		X01
Collector Power Dissipation (Maximum)	PC	0.03W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	75°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	4MHz

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