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9011G NPN Transistor

The 9011G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 9011G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 9011G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 9011G transistor as follows.

Circuit diagram symbol of the 9011G transistor

9011G Transistor Specification

Transistor Code 9011G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.31W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 18V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 135°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 72
Transition Frequency FT 50MHz
Collector Capacitance CC 3.5pF

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