55GN01MA-TL-E NPN Transistor

The 55GN01MA-TL-E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 55GN01MA-TL-E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 55GN01MA-TL-E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 55GN01MA-TL-E transistor as follows.

55GN01MA-TL-E Transistor Specification

Transistor Code		55GN01MA-TL-E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-323
Transistor SMD Code		ZD
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	0.07A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	3000MHz
Collector Capacitance	CC	1pF

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