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4N1815PGP NPN Transistor

The 4N1815PGP is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 4N1815PGP transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 4N1815PGP transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 4N1815PGP transistor as follows.

Circuit diagram symbol of the 4N1815PGP transistor

4N1815PGP Transistor Specification

Transistor Code 4N1815PGP
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO251S
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 70
Transition Frequency FT 180MHz
Collector Capacitance CC 25pF

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More Transistors Datasheets in TO251S Package