3DG535 NPN Transistor

The 3DG535 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG535 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG535 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG535 transistor as follows.

3DG535 Transistor Specification

Transistor Code		3DG535
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.02A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	450MHz
Collector Capacitance	CC	0.9pF

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