3DG512B NPN Transistor

The 3DG512B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG512B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG512B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG512B transistor as follows.

3DG512B Transistor Specification

Transistor Code		3DG512B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	130V
Collector-Emitter Voltage (Maximum)	VCE	90V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		60

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