3DG4081W NPN Transistor

The 3DG4081W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG4081W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG4081W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG4081W transistor as follows.

3DG4081W Transistor Specification

Transistor Code		3DG4081W
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT323
Transistor SMD Code		HBQ_HBR_HBS
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	180MHz
Collector Capacitance	CC	2pF

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