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3DG40005AS-H NPN Transistor

The 3DG40005AS-H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG40005AS-H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG40005AS-H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG40005AS-H transistor as follows.

Circuit diagram symbol of the 3DG40005AS-H transistor

3DG40005AS-H Transistor Specification

Transistor Code 3DG40005AS-H
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 500V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 20V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 3MHz

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