3DG3330 NPN Transistor

The 3DG3330 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG3330 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG3330 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG3330 transistor as follows.

3DG3330 Transistor Specification

Transistor Code		3DG3330
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92S
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	200MHz
Collector Capacitance	CC	3pF

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