3DG3001A1-H NPN Transistor

The 3DG3001A1-H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG3001A1-H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG3001A1-H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG3001A1-H transistor as follows.

3DG3001A1-H Transistor Specification

Transistor Code		3DG3001A1-H
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	900V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		20

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