3DG2999 NPN Transistor

The 3DG2999 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG2999 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG2999 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG2999 transistor as follows.

3DG2999 Transistor Specification

Transistor Code		3DG2999
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92S
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	450MHz

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