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3DG2610 NPN Transistor

The 3DG2610 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG2610 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG2610 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG2610 transistor as follows.

Circuit diagram symbol of the 3DG2610 transistor

3DG2610 Transistor Specification

Transistor Code 3DG2610
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92L
Collector Power Dissipation (Maximum) PC 0.8W
Collector-Base Voltage (Maximum) VCB 300V
Collector-Emitter Voltage (Maximum) VCE 300V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 50MHz
Collector Capacitance CC 4pF

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