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3DG2058S NPN Transistor

The 3DG2058S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG2058S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG2058S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG2058S transistor as follows.

Circuit diagram symbol of the 3DG2058S transistor

3DG2058S Transistor Specification

Transistor Code 3DG2058S
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92S
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 82
Transition Frequency FT 150MHz
Collector Capacitance CC 1.3pF

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