3DG160 NPN Transistor

The 3DG160 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG160 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG160 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG160 transistor as follows.

3DG160 Transistor Specification

Transistor Code		3DG160
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO18
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	0.02A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	10MHz

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