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3DG120 NPN Transistor

The 3DG120 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG120 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG120 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG120 transistor as follows.

Circuit diagram symbol of the 3DG120 transistor

3DG120 Transistor Specification

Transistor Code 3DG120
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO18
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.15A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 150MHz

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