3DG1162 NPN Transistor

The 3DG1162 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG1162 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG1162 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG1162 transistor as follows.

3DG1162 Transistor Specification

Transistor Code		3DG1162
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126F
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	180MHz

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