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3DG112 NPN Transistor

The 3DG112 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DG112 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DG112 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DG112 transistor as follows.

Circuit diagram symbol of the 3DG112 transistor

3DG112 Transistor Specification

Transistor Code 3DG112
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO18
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 500MHz

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