3DD9E NPN Transistor

The 3DD9E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD9E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD9E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD9E transistor as follows.

3DD9E Transistor Specification

Transistor Code		3DD9E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		7

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