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3DD4G NPN Transistor

The 3DD4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD4G transistor as follows.

Circuit diagram symbol of the 3DD4G transistor

3DD4G Transistor Specification

Transistor Code 3DD4G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO276AB TO220 TO257
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 500V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 0.75A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 7

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