3DD4550A4 NPN Transistor

The 3DD4550A4 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD4550A4 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD4550A4 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD4550A4 transistor as follows.

3DD4550A4 Transistor Specification

Transistor Code		3DD4550A4
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO252
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	1050V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	18V
Forward Current Transfer Ratio (hFE Value)		48

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