3DD3015A1 NPN Transistor

The 3DD3015A1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD3015A1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD3015A1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD3015A1 transistor as follows.

3DD3015A1 Transistor Specification

Transistor Code		3DD3015A1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.8W
Collector-Base Voltage (Maximum)	VCB	800V
Collector-Emitter Voltage (Maximum)	VCE	450V
Collector Current (Maximum)	IC	1.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	5MHz

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