3DD13012AN NPN Transistor

The 3DD13012AN is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD13012AN transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD13012AN transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD13012AN transistor as follows.

3DD13012AN Transistor Specification

Transistor Code		3DD13012AN
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3P
Collector Power Dissipation (Maximum)	PC	120W
Collector-Base Voltage (Maximum)	VCB	750V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	5MHz

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