3DD13012A8 NPN Transistor

The 3DD13012A8 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD13012A8 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD13012A8 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD13012A8 transistor as follows.

3DD13012A8 Transistor Specification

Transistor Code		3DD13012A8
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220AB
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	750V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	5MHz

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