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3DD13009C8 NPN Transistor

The 3DD13009C8 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 3DD13009C8 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 3DD13009C8 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the 3DD13009C8 transistor as follows.

Circuit diagram symbol of the 3DD13009C8 transistor

3DD13009C8 Transistor Specification

Transistor Code 3DD13009C8
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220AB
Collector Power Dissipation (Maximum) PC 100W
Collector-Base Voltage (Maximum) VCB 700V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 5MHz

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